CPH3340-TL-E
MOSFET P-CH 20V 5A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel MOSFET, part number CPH3340-TL-E, offers a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current of 5A at 25°C. This device features a low Rds(On) of 45mOhm at 2.5A, 4V, and a gate charge of 16 nC maximum at 4V. With a maximum power dissipation of 1.2W, it is suitable for applications requiring efficient switching. The component is packaged in a compact 3-CPH (SC-96) surface-mount configuration. Key electrical parameters include an input capacitance (Ciss) of 1875 pF maximum at 10V. Operating temperature reaches up to 150°C (TJ). This MOSFET is utilized in power management and switching circuits across various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 2.5A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-CPH |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1875 pF @ 10 V |
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