BVSS84LT3G
MOSFET P-CH 50V 130MA SOT-23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi BVSS84LT3G is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 130mA at 25°C. The Rds On is specified at a maximum of 10 Ohms when driven at 5V with 100mA of drain current. With a power dissipation capability of 225mW (Ta) and a maximum junction temperature of 150°C, it is packaged in a compact SOT-23-3 (TO-236) surface mount configuration. Key electrical parameters include a Gate Charge (Qg) of 2.2 nC at 10V and Input Capacitance (Ciss) of 36 pF at 5V. This device is qualified to AEC-Q101 and is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 225mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 5 V |
| Qualification | AEC-Q101 |
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