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BSS138LT7G

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BSS138LT7G

MOSFET N-CH 50V 200MA SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's BSS138LT7G is an N-channel enhancement mode MOSFET designed for general purpose switching applications. This device features a drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 200mA at 25°C. The on-resistance (Rds On) is specified at a maximum of 3.5 Ohms when driven at 200mA with a 5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 1mA. Input capacitance (Ciss) is rated at 50 pF maximum at 25V. This MOSFET operates across a wide temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 (TO-236-3) surface mount package, supplied on tape and reel. The onsemi BSS138LT7G is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs3.5Ohm @ 200mA, 5V
FET Feature-
Power Dissipation (Max)225mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)2.75V, 5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V

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