BSS138-T
MOSFET N-CH 50V 220MA SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BSS138-T is an N-Channel enhancement mode MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vds) of 50V and a continuous drain current (Id) of 220mA at 25°C. The Rds On is specified at a maximum of 3.5 Ohms when driven at 220mA with a 10V gate-source voltage. The device exhibits a low gate charge of 2.4 nC (typical) at 10V and an input capacitance (Ciss) of 27 pF (maximum) at 25V. It is housed in a compact 4-XFBGA package (EFCP1313-4CC-037) suitable for surface mounting. Typical applications include low-power switching circuits and logic level translation, finding use in industrial automation and consumer electronics. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-XFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 220mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | EFCP1313-4CC-037 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27 pF @ 25 V |
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