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BSS123LT7G

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BSS123LT7G

MOSFET N-CH 100V 15UA SOT23

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BSS123LT7G is an N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 170mA at 25°C (Tj). With a maximum power dissipation of 225mW (Ta) and a low Rds(on) of 6 Ohms at 100mA and 10V gate drive, it offers efficient switching characteristics. The device has a gate-source voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 2.6V at 1mA. Input capacitance (Ciss) is a maximum of 20 pF at 25V. Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive applications. It is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case-
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170mA (Tj)
Rds On (Max) @ Id, Vgs6Ohm @ 100mA, 10V
FET Feature-
Power Dissipation (Max)225mW (Ta)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device Package-
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds20 pF @ 25 V
QualificationAEC-Q101

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