BSS123LT3
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BSS123LT3 is an N-Channel MOSFET designed for surface-mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 170mA at 25°C. The Rds On is specified at a maximum of 6 Ohms when driven at 100mA with a gate-source voltage (Vgs) of 10V. The maximum gate-source voltage is ±20V, with a typical threshold voltage (Vgs(th)) of 2.8V at 1mA. Input capacitance (Ciss) is a maximum of 20pF at 25V. With a power dissipation of 225mW (Ta), this device operates across a temperature range of -55°C to 150°C. Packaged in a SOT-23-3 (TO-236) surface-mount case, the BSS123LT3 is delivered on tape and reel. This component finds application in various electronic systems, including power management and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225mW (Ta) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 25 V |
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