BSS123-G
FET 100V 6.0 MOHM SOT23Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi BSS123-G is an N-Channel MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 170mA at 25°C. Its low on-resistance (Rds On) of 6 Ohms is specified at 170mA drain current and 10V gate-source voltage. The device offers a maximum power dissipation of 360mW (Ta) and a gate charge (Qg) of 2.5 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 73 pF at 25V. The BSS123-G is housed in a SOT-23-3 surface mount package, suitable for compact designs. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 34µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 73 pF @ 25 V |
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