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BSS123-F169

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BSS123-F169

MOSFET N-CH SOT23

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BSS123-F169 is an N-Channel MOSFET in a SOT-23-3 package, designed for surface mount applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 170mA at 25°C (Ta), with a maximum power dissipation of 360mW (Ta). The Rds On is specified at a maximum of 6 Ohms for an Id of 170mA and Vgs of 10V, achievable with drive voltages between 4.5V and 10V. Key electrical characteristics include a maximum gate charge (Qg) of 2.5 nC at 10V and a maximum input capacitance (Ciss) of 73 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in battery management, power switching, and general-purpose amplification in consumer electronics and industrial control systems. The part is supplied on a Tape & Reel (TR).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 170mA, 10V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds73 pF @ 25 V

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