Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

BS170ZL1G

Banner
productimage

BS170ZL1G

MOSFET N-CH 60V 500MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi BS170ZL1G is an N-Channel MOSFET with a drain-source voltage (Vdss) of 60V. This through-hole component, packaged in a TO-92 (TO-226) case, offers a continuous drain current (Id) of 500mA at 25°C and a maximum power dissipation (Pd) of 350mW. The on-resistance (Rds On) is rated at 5 Ohm maximum at 200mA drain current and 10V gate-source voltage. Key electrical parameters include a gate-source threshold voltage (Vgs(th)) of 3V maximum at 1mA and an input capacitance (Ciss) of 60 pF maximum at 10V. It operates within a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in consumer electronics and industrial applications requiring efficient switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FCP850N80Z

MOSFET N-CH 800V 8A TO220-3

product image
FDP4D5N10C

MOSFET N-CH 100V 128A TO220-3

product image
MCH3376-TL-W

MOSFET P-CH 20V 1.5A 3MCPH