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BS170RLRP

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BS170RLRP

MOSFET N-CH 60V 500MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BS170RLRP is an N-Channel MOSFET designed for various applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 500mA at 25°C. The on-resistance (Rds On) is specified as a maximum of 5 Ohms at 200mA and 10V Vgs. With a power dissipation of 350mW (Ta), it is suitable for use in applications such as consumer electronics, industrial control, and general-purpose switching. The device operates within a temperature range of -55°C to 150°C and is provided in a TO-92 (TO-226) package suitable for through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 60 pF at 10V and a gate-source voltage (Vgs) tolerance of ±20V. The BS170RLRP is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 10 V

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