BS170RLRMG
MOSFET N-CH 60V 500MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BS170RLRMG is a general-purpose N-Channel MOSFET designed for a variety of applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 500mA at 25°C. The On-Resistance (Rds On) is specified at 5 Ohms maximum when the Gate-Source Voltage (Vgs) is 10V and the Drain Current is 200mA. With a Gate-Source Voltage limit of ±20V and a Threshold Voltage (Vgs(th)) rated at 3V maximum for 1mA of drain current, this MOSFET offers flexibility in drive requirements. The BS170RLRMG is housed in a TO-92 (TO-226) package with formed leads and is supplied in Tape & Box packaging. Its maximum power dissipation is 350mW (Ta), and it operates across a temperature range of -55°C to 150°C. This device is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-92 (TO-226) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 10 V |
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