BS170G
MOSFET N-CH 60V 500MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BS170G is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) capability of 500mA at 25°C. With a maximum Power Dissipation (Pd) of 350mW (Ta), it is suitable for low-power designs. The Rds On (Max) is specified at 5 Ohms when driven at 200mA and 10V (Vgs). Key parameters include an Input Capacitance (Ciss) of 60pF at 10V (Vds), a Gate-to-Source Voltage (Vgs) tolerance of ±20V, and a threshold voltage (Vgs(th)) of 3V at 1mA. The BS170G is housed in a TO-92 (TO-226) package, mounted via through-hole, and operates across a temperature range of -55°C to 150°C. This component finds application in various industrial and consumer electronics, including power management and signal switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-92 (TO-226) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 10 V |
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