BS170_L34Z
MOSFET N-CH 60V 500MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BS170-L34Z is an N-Channel MOSFET designed with Metal Oxide technology. This through-hole component, housed in a TO-92-3 package, features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of up to 500mA at 25°C. Its Rds On is specified at a maximum of 5 Ohms when driven by 10V with a 200mA drain current. The device exhibits an input capacitance (Ciss) of 40 pF at 10V and a gate-source threshold voltage (Vgs(th)) of 3V at 1mA. With a maximum power dissipation of 830mW (Ta), the BS170-L34Z operates within a temperature range of -55°C to 150°C. This component is commonly utilized in general-purpose switching and amplification applications across various electronic systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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