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BS108ZL1G

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BS108ZL1G

MOSFET N-CH 200V 250MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi BS108ZL1G is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 250mA at 25°C. The Rds On specification is a maximum of 8 Ohms at 100mA and 2.8V Vgs, with a typical Vgs(th) of 1.5V at 1mA. Input capacitance (Ciss) is specified at a maximum of 150pF at 25V. The device offers a power dissipation of 350mW (Ta) and operates within a temperature range of -55°C to 150°C. Encased in a TO-92 (TO-226) package, this through-hole mounted component is supplied on cut tape. The BS108ZL1G is suitable for use in various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Rds On (Max) @ Id, Vgs8Ohm @ 100mA, 2.8V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)2V, 2.8V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V

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