BS108G
MOSFET N-CH 200V 250MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BS108G is an N-Channel MOSFET designed for general-purpose switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 250mA at 25°C. The device exhibits a maximum Rds On of 8 Ohms at 100mA and 2.8V Vgs. With a power dissipation of 350mW (Ta) and mounting via through-hole TO-92 (TO-226) packaging, it is suitable for various industrial and consumer electronics applications. Key electrical parameters include an input capacitance (Ciss) of 150pF at 25V and a gate-source threshold voltage (Vgs(th)) of 1.5V at 1mA. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 100mA, 2.8V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | TO-92 (TO-226) |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 2.8V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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