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BS107ARL1G

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BS107ARL1G

MOSFET N-CH 200V 250MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi BS107ARL1G is an N-Channel MOSFET designed for various electronic applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 250mA at 25°C. The device offers a maximum on-resistance (Rds On) of 6.4 Ohms at 250mA and 10V gate-source voltage. With a power dissipation of 350mW (Ta), it is suitable for through-hole mounting in a TO-92 (TO-226) package. Key parameters include an input capacitance (Ciss) of 60pF at 25V and a threshold voltage (Vgs(th)) of 3V at 1mA. The operating temperature range is -55°C to 150°C. This device finds application in general-purpose switching and amplification circuits across industries such as consumer electronics and industrial control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Rds On (Max) @ Id, Vgs6.4Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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