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BS107ARL1

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BS107ARL1

MOSFET N-CH 200V 250MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BS107ARL1 is a through-hole N-Channel MOSFET designed for general-purpose switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 250mA at 25°C. The BS107ARL1 exhibits a maximum on-resistance (Rds On) of 6.4 Ohms when driven at 10V Vgs and 250mA Id. With a maximum power dissipation of 350mW (Ta), it is suitable for use in various industrial and consumer electronics. The TO-92 package, supplied on tape and reel, facilitates automated assembly processes. Key electrical parameters include an input capacitance (Ciss) of 60pF at 25V and a threshold voltage (Vgs(th)) of 3V at 1mA. This device operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Rds On (Max) @ Id, Vgs6.4Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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