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BS107AG

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BS107AG

MOSFET N-CH 200V 250MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi BS107AG is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 200V. This device offers a continuous drain current (Id) of 250mA at 25°C with a maximum power dissipation of 350mW. The Rds On is specified at 6.4 Ohms maximum for a given Id and Vgs of 250mA and 10V respectively. Input capacitance (Ciss) is a maximum of 60 pF at 25V. The BS107AG features a TO-92 (TO-226) package suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 3V at 1mA. This component is utilized in applications requiring robust switching and amplification characteristics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Rds On (Max) @ Id, Vgs6.4Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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