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BMS4007

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BMS4007

MOSFET N-CH 75V 60A TO220ML

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BMS4007 is an N-Channel MOSFET designed for robust power management applications. This component offers a Drain-Source Voltage (Vdss) of 75V and a continuous drain current (Id) of 60A at 25°C, with a maximum Rds(on) of 7.8mOhm at 30A and 10V drive. Key electrical parameters include a gate charge (Qg) of 160 nC and an input capacitance (Ciss) of 9700 pF at 20V. The device features a power dissipation capability of 2W (Ta) and 30W (Tc). Packaged in a TO-220ML (TO-220-3 Full Pack) for through-hole mounting, the BMS4007 operates across a wide temperature range of -55°C to 150°C (TJ) and supports a Vgs(max) of ±20V. This MOSFET is suitable for use in various industrial and automotive power conversion systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:
Technical Details:
PackagingBag
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Rds On (Max) @ Id, Vgs7.8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-220ML
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9700 pF @ 20 V

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