BMS4003
MOSFET N-CH 100V 18A TO220MLManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number BMS4003, offers a 100V drain-source voltage and 18A continuous drain current at 25°C ambient. This TO-220ML package device features a maximum on-resistance of 65mOhm at 9A and 10V gate-source voltage. Key parameters include a gate charge of 11.4 nC and input capacitance of 680 pF at 20V. With a maximum power dissipation of 2W (ambient) and 25W (case), it operates across a temperature range of -55°C to 150°C. The MOSFET technology provides efficient switching for applications in power management, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220ML |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 20 V |
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