BMS3003-1E
MOSFET P-CH 60V 78A TO220F-3SGManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET, part number BMS3003-1E, offers a 60V drain-source voltage and continuous drain current capability of 78A at 25°C (Ta). This device features a low on-resistance of 6.5mOhm at 39A and 10V Vgs, facilitating efficient power switching. The TO-220F-3SG package provides thermal management with a power dissipation of 2W (Ta) and 40W (Tc). Key parameters include input capacitance (Ciss) of 13200pF at 20V and gate charge (Qg) of 285nC at 10V. Designed for through-hole mounting, this MOSFET is suitable for applications in industrial automation, power management, and electric vehicle systems where robust power handling is critical. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220F-3SG |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V |
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