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BFL4036-1E

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BFL4036-1E

MOSFET N-CH 500V 9.6A TO220F-3FS

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BFL4036-1E is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 9.6 A at 25°C (Tc). With a maximum Rds(on) of 520 mOhm at 7A and 10V Vgs, it offers efficient power handling. The BFL4036-1E is packaged in a TO-220F-3FS with a through-hole mounting type. Its high power dissipation capability, rated at 37W (Tc) and 2W (Ta), makes it suitable for power supply units, industrial motor control, and lighting applications. The device operates reliably over a wide temperature range from -55°C to 150°C (TJ). Key parameters include a Gate Charge (Qg) of 38.4 nC at 10V and Input Capacitance (Ciss) of 1000 pF at 30V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.6A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 30 V

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