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BFL4026-1E

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BFL4026-1E

MOSFET N-CH 900V 3.5A TO220F-3FS

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BFL4026-1E is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 900V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 3.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.6 Ohms at 2.5A and 10V gate-source voltage (Vgs), it offers efficient switching performance. The device is housed in a TO-220F-3FS package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 33 nC at 10V and input capacitance (Ciss) of 650 pF at 30V. Power dissipation is rated at 2W (Ta) and 35W (Tc). This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Rds On (Max) @ Id, Vgs3.6Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 30 V

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