Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

BFL4001-1EX

Banner
productimage

BFL4001-1EX

MOSFET N-CH 900V 6.5A TO220-3 FP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BFL4001-1EX is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 6.5A at 25°C ambient. With a maximum Rds(On) of 2.7 Ohms at 3.25A and 10V Vgs, it offers efficient switching performance. The device is packaged in a TO-220-3 Fullpack/TO-220F-3SG through-hole configuration, suitable for demanding thermal management with a power dissipation of up to 37W (Tc). Key parameters include a gate charge (Qg) of 44 nC at 10V and input capacitance (Ciss) of 850 pF at 30V. This MOSFET is commonly utilized in power supply units, industrial motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Rds On (Max) @ Id, Vgs2.7Ohm @ 3.25A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-220-3 Fullpack/TO-220F-3SG
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 30 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FCP850N80Z

MOSFET N-CH 800V 8A TO220-3

product image
FDP4D5N10C

MOSFET N-CH 100V 128A TO220-3

product image
MCH3376-TL-W

MOSFET P-CH 20V 1.5A 3MCPH