BFL4001-1E
MOSFET N-CH 900V 4.1A TO220-3 FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BFL4001-1E is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 900 V and a continuous Drain Current (Id) of 4.1 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 2.7 Ohms maximum at 3.25 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 44 nC maximum at 10 V and an Input Capacitance (Ciss) of 850 pF maximum at 30 V. With a maximum Power Dissipation of 37 W at 25°C (Tc), it is housed in a TO-220-3 Full Pack package for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). This MOSFET technology is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 Fullpack/TO-220F-3SG |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 30 V |
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