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BFL4001

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BFL4001

MOSFET N-CH 900V 4.1A TO220FI

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi BFL4001 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 4.1A at 25°C (Ta). The Rds On is specified at a maximum of 2.7 Ohms at 3.25A and 10V gate drive. With a gate charge (Qg) of 44 nC and input capacitance (Ciss) of 850 pF, this MOSFET offers efficient switching characteristics. Its TO-220FI(LS) package with a through-hole mounting type facilitates integration into power supply circuits, industrial automation, and renewable energy systems. The device supports a maximum gate-source voltage (Vgs) of ±30V and operates within an ambient temperature range of -55°C to 150°C (TJ), with a maximum power dissipation of 2W (Ta) and 37W (Tc).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bag
Technical Details:
PackagingBag
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.1A (Ta)
Rds On (Max) @ Id, Vgs2.7Ohm @ 3.25A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 30 V

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