BBS3002-TL-1E
MOSFET P-CH 60V 100A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BBS3002-TL-1E is a P-Channel MOSFET designed for high-power switching applications. Featuring a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25°C, this component offers a low on-resistance (Rds On) of 5.8mOhm at 50A and 10V Vgs. The device is housed in a TO-263-3, D2PAK surface mount package, enabling efficient thermal management with a maximum power dissipation of 90W (Tc). Key characteristics include a gate charge (Qg) of 280nC at 10V and input capacitance (Ciss) of 13200pF at 20V. It operates reliably across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET is suitable for use in power management, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V |
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