BBS3002-DL-E
MOSFET P-CH 60V 100A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi P-Channel MOSFET, part number BBS3002-DL-E, is designed for high-power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current capability of 100A at 25°C (Ta). With a maximum power dissipation of 90W (Tc), it is well-suited for demanding thermal environments. The low on-resistance (Rds On) of 5.8mOhm at 50A and 10V gate drive ensures efficient power transfer. Key parameters include a gate charge (Qg) of 280 nC (Max) at 10V and input capacitance (Ciss) of 13200 pF (Max) at 20V. The BBS3002-DL-E utilizes a P-Channel MOSFET technology and is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, compatible with surface mount assembly. It is supplied in Tape & Reel (TR) packaging and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V |
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