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BBS3002-DL-1E

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BBS3002-DL-1E

MOSFET P-CH 60V 100A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi BBS3002-DL-1E is a P-Channel Power MOSFET designed for demanding power management applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 100A at 25°C (Ta), with a maximum power dissipation of 90W (Tc). The device exhibits a low on-resistance of 5.8mOhm at 50A and 10V, facilitated by its advanced MOSFET technology. Key electrical parameters include a gate charge (Qg) of 280 nC (Max) at 10V and input capacitance (Ciss) of 13200 pF (Max) at 20V. The drive voltage range is specified from 4V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Packaged in a TO-263 (D2PAK) surface-mount configuration, this MOSFET is suitable for applications in electric vehicle power trains, industrial motor control, and high-power switching power supplies. The BBS3002-DL-1E is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Rds On (Max) @ Id, Vgs5.8mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)90W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13200 pF @ 20 V

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