BBL4001-1E
MOSFET N-CH 60V 74A TO220-3 FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi BBL4001-1E is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 74A at 25°C ambient. With a low on-resistance of 6.1mOhm maximum at 37A and 10V Vgs, it ensures efficient power transfer. The device offers a maximum junction temperature of 150°C and a power dissipation of 2W (ambient) or 35W (case). Key parameters include a gate charge of 135nC at 10V and input capacitance of 6900pF at 20V. The BBL4001-1E is housed in a TO-220-3 Full Pack package for through-hole mounting. This MOSFET is suitable for use in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | TO-220-3 Fullpack/TO-220F-3SG |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 20 V |
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