ATP602-TL-H
MOSFET N-CH 600V 5A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ATP602-TL-H is a 600V N-Channel Power MOSFET designed for demanding applications. This component features a continuous drain current (Id) of 5A at 25°C (Ta) and a maximum power dissipation of 70W (Tc). With a low on-resistance (Rds On) of 2.7 Ohms at 2.5A and 10V Vgs, it offers efficient power switching. The device boasts a gate charge of 13.6 nC at 10V and input capacitance (Ciss) of 350 pF at 30V. Packaged in an ATPAK (2 Leads+Tab) for surface mounting, it operates at temperatures up to 150°C (TJ). This MOSFET finds application in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
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