ATP405-TL-H
MOSFET N-CH 100V 40A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET, part number ATP405-TL-H, offers a 100V drain-source breakdown voltage and a continuous drain current of 40A at 25°C ambient. This device features a low on-resistance of 33mOhm maximum at 20A and 10V Vgs, with a gate charge of 68nC maximum at 10V. The ATP405-TL-H is housed in an ATPAK surface mount package, designed for efficient thermal management with 70W power dissipation at 25°C case temperature. Its high operating temperature of 150°C junction temperature makes it suitable for demanding applications in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 20 V |
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