ATP302-TL-H
MOSFET P-CH 60V 70A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ATP302-TL-H is a P-Channel MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 70A at 25°C (Ta), this component offers robust performance. Its low on-resistance (Rds On) of 13mOhm at 35A and 10V gate drive ensures efficient power handling with a maximum power dissipation of 70W (Tc). Key parameters include a gate charge (Qg) of 115 nC at 10V and input capacitance (Ciss) of 5400 pF at 20V. Operating at temperatures up to 150°C (TJ), it utilizes ATPAK surface mount packaging in a Tape & Reel configuration. This MOSFET is suitable for power management solutions across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 20 V |
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