ATP216-TL-H
MOSFET N-CH 50V 35A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi ATP216-TL-H is an N-Channel MOSFET designed for demanding applications. This component features a 50V drain-source breakdown voltage and supports a continuous drain current of 35A at 25°C ambient. The device exhibits a maximum on-resistance of 23mOhm at 18A and 4.5V gate-source voltage. Key parameters include a gate charge of 30 nC at 4.5V Vgs and an input capacitance of 2700 pF at 20V Vds. The ATP216-TL-H is housed in an ATPAK package, suitable for surface mounting, and offers a maximum power dissipation of 40W at the case temperature. Its operating temperature range extends to 150°C (TJ). This MOSFET is commonly utilized in power management solutions, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 18A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 20 V |