ATP213-TL-H
MOSFET N-CH 60V 50A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ATP213-TL-H is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C ambient temperature, with a maximum power dissipation of 50W at the case. The MOSFET exhibits a low on-resistance of 16mOhm at 25A and 10V Vgs, facilitated by a gate drive range of 4V to 10V. Key electrical parameters include a gate charge (Qg) of 58 nC maximum at 10V Vgs and an input capacitance (Ciss) of 3150 pF maximum at 20V Vds. Operating at junction temperatures up to 150°C, this component is housed in an ATPAK surface mount package, supplied on tape and reel. The ATP213-TL-H is suitable for use in power conversion, automotive, and industrial control systems requiring robust power handling.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 20 V |
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