ATP212-TL-H
MOSFET N-CH 60V 35A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ATP212-TL-H is an N-Channel Power MOSFET designed for demanding applications requiring robust performance. Featuring a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Ta), this component offers significant power handling capabilities with a maximum power dissipation of 40W (Tc). The ATP212-TL-H exhibits a low on-resistance (Rds On) of 23mOhm at 18A and 10V Vgs, contributing to efficient power conversion. Its gate charge (Qg) is 34.5 nC at 10V, and input capacitance (Ciss) is 1820 pF at 20V, parameters critical for high-frequency switching. Mounted in an ATPAK package, this device is suitable for surface mount assembly and operates within a junction temperature range of 150°C. This MOSFET is utilized across various industries including industrial automation and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 20 V |
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