ATP208-TL-H
MOSFET N-CH 40V 90A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ATP208-TL-H is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C ambient. The low on-resistance of 6mOhm at 45A and 10V gate-source voltage, coupled with a maximum power dissipation of 60W at 25°C case temperature, makes it suitable for power conversion and management systems. Key electrical characteristics include a gate charge of 83 nC at 10V and an input capacitance of 4510 pF at 20V. The device is housed in an ATPAK package with surface mount technology and operates within a temperature range of -55°C to 150°C. This MOSFET is utilized in industries such as automotive and industrial power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 20 V |
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