ATP207-TL-H
MOSFET N-CH 40V 65A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ATP207-TL-H is an N-Channel MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 65A at 25°C (Ta), with a maximum power dissipation of 50W (Tc). The low on-resistance (Rds On) of 9.1mOhm at 33A and 10V gate-to-source voltage (Vgs) ensures efficient power transfer. It operates with a Vgs range of +/-20V and a drive voltage as low as 4.5V. Key parameters include a gate charge (Qg) of 54nC (max) and input capacitance (Ciss) of 2710pF (max). This surface mount device is housed in the ATPAK package and supplied on tape and reel. The ATP207-TL-H is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2710 pF @ 20 V |
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