ATP202-TL-H
MOSFET N-CH 30V 50A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ATP202-TL-H is a 30V N-Channel MOSFET designed for high-density power applications. This component features a low on-resistance of 12mOhm at 25A and 10V Vgs, enabling efficient power delivery. The ATP202-TL-H offers a continuous drain current of 50A (Ta) and a maximum power dissipation of 40W (Tc), suitable for demanding thermal environments. Key parameters include a 27 nC gate charge and 1650 pF input capacitance, facilitating fast switching speeds. The device utilizes ATPAK packaging for surface mounting, ensuring a compact footprint. This MOSFET is commonly employed in automotive, industrial power control, and power supply units. The operating temperature range is up to 150°C (TJ) with a ±20V Vgs maximum rating. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 10 V |
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