ATP201-TL-H
MOSFET N-CH 30V 35A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi ATP201-TL-H N-Channel MOSFET in an ATPAK package. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 35A at 25°C ambient. With a low on-resistance of 17mOhm at 18A and 10V Vgs, it offers efficient power switching. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 17 nC at 10V. Input capacitance (Ciss) is rated at 985 pF maximum at 10V. Power dissipation is 30W at 25°C case temperature. Operating junction temperature reaches 150°C. This MOSFET is suitable for applications in power management, automotive systems, and industrial automation. Packaged in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 985 pF @ 10 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
