ATP114-TL-H
MOSFET P-CH 60V 55A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ATP114-TL-H is a P-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 55 A at 25°C (Ta). Exhibiting a low on-resistance (Rds On) of 16 mOhm at 28 A and 10 V, it achieves efficient power handling with a maximum power dissipation of 60 W (Tc). The device operates with a gate threshold voltage (Vgs(th)) that is not specified but is driven efficiently by a range of 4 V to 10 V. Key parameters include a gate charge (Qg) of 92 nC at 10 V and an input capacitance (Ciss) of 4000 pF at 20 V, ensuring robust switching performance. The ATP114-TL-H is housed in an ATPAK surface-mount package and is supplied on tape and reel, making it suitable for automated assembly in industries such as automotive and industrial power management. It supports a maximum gate-source voltage (Vgs) of ±20 V and an operating junction temperature of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 20 V |