ATP112-TL-H
MOSFET P-CH 60V 25A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ATP112-TL-H is a P-channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain current (Id) of 25 A at 25°C ambient. Its low on-resistance, specified as 43 mOhm maximum at 13 A and 10 V Vgs, is achieved with a drive voltage range of 4 V to 10 V. The device supports a maximum power dissipation of 40W (Tc) and operates at junction temperatures up to 150°C. Key electrical characteristics include a gate charge (Qg) of 33.5 nC maximum at 10 V Vgs and an input capacitance (Ciss) of 1450 pF maximum at 20 V Vds. The ATP112-TL-H is supplied in an ATPAK package (2 Leads+Tab) suitable for surface mounting and is delivered on tape and reel. This MOSFET is utilized in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 20 V |
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