ATP108-TL-H
MOSFET P-CH 40V 70A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ATP108-TL-H is a P-Channel MOSFET designed for demanding power applications. This device features a 40V drain-source voltage and a continuous drain current capability of 70A at 25°C ambient temperature, with a maximum power dissipation of 60W at the case. The low on-resistance of 10.4mOhm is achieved at 35A drain current and 10V gate-source voltage, minimizing conduction losses. With a gate charge of 79.5 nC and input capacitance of 3850 pF, it is suitable for efficient switching. The MOSFET operates at junction temperatures up to 150°C and is available in an ATPAK surface mount package. This component finds application in power management, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 79.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 20 V |
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