ATP106-TL-H
MOSFET P-CH 40V 30A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ATP106-TL-H, a P-Channel Power MOSFET in an ATPAK (2 Leads+Tab) surface mount package. This device features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 30A at 25°C. With a maximum power dissipation of 40W (Tc) and a low on-resistance (Rds On) of 25mOhm at 15A and 10V Vgs, it is suitable for high-current switching applications. The ATP106-TL-H offers a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 1380 pF at 20V. Operating temperature is rated up to 150°C (TJ). This component is commonly utilized in automotive, industrial power control, and power supply designs. Packaged in tape & reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 20 V |
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