ATP104-TL-HX
MOSFET P-CH 30V 75A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ATP104-TL-HX is a P-Channel MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C ambient. With a low on-resistance of 8.4mOhm maximum at 38A and 10V gate-source voltage, it ensures efficient power delivery. The ATP104-TL-HX is housed in an ATPAK surface mount package, offering a power dissipation of 60W at the case temperature. Key parameters include a gate charge of 76 nC and input capacitance of 3950 pF, both specified at 10V. Operating at junction temperatures up to 150°C, this MOSFET is suitable for use in automotive and industrial power management systems. The device supports a gate drive range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 10 V |
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