ATP103-TL-H
MOSFET P-CH 30V 55A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ATP103-TL-H, a P-Channel MOSFET, offers a 30V drain-source voltage rating and a continuous drain current capability of 55A at 25°C ambient. This device features a low on-resistance of 13mOhm maximum at 28A and 10V gate-source voltage. The ATP103-TL-H is housed in an ATPAK package with surface mount capability and supports a maximum power dissipation of 50W at the case temperature. Key electrical parameters include a gate charge of 47nC and input capacitance of 2430pF at 10V drain-source voltage. The operating junction temperature reaches 150°C. This component is utilized in applications such as power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 10 V |
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