ATP102-TL-H
MOSFET P-CH 30V 40A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi ATP102-TL-H is a P-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 40 A at 25°C ambient. The device offers a low on-resistance (Rds On) of 18.5 mOhm maximum at 20 A and 10 V gate drive. It supports a gate-source voltage (Vgs) range of ±20 V. With a maximum power dissipation of 40 W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for power management in automotive and industrial sectors. The ATP102-TL-H is provided in an ATPAK surface mount package, supplied on tape and reel, facilitating high-volume production processes. Key electrical parameters include an input capacitance (Ciss) of 1490 pF maximum and a gate charge (Qg) of 34 nC maximum.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 10 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
