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ATP101-TL-HX

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ATP101-TL-HX

MOSFET P-CH 30V 25A ATPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi ATP101-TL-HX is a P-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 25A at 25°C (Ta). Its low on-resistance (Rds On) of 30mOhm at 13A and 10V makes it suitable for efficient power switching. The device operates with a gate drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 18.5 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 875 pF at 10V. The ATP101-TL-HX is packaged in an ATPAK (2 Leads+Tab) surface mount package and supports a maximum power dissipation of 30W (Tc). Operating temperature reaches 150°C (TJ). This MOSFET is frequently utilized in power management, automotive, and industrial control systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseATPAK (2 Leads+Tab)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Rds On (Max) @ Id, Vgs30mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageATPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds875 pF @ 10 V

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