ATP101-TL-H
MOSFET P-CH 30V 25A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET ATP101-TL-H, a 30V device with a continuous drain current of 25A (Ta) and a maximum power dissipation of 30W (Tc). This surface mount component utilizes ATPAK packaging and offers a low on-resistance of 30mOhm at 13A and 10V. Key parameters include a gate charge of 18.5 nC at 10V and an input capacitance of 875 pF at 10V. With an operating temperature up to 150°C, this MOSFET is suitable for applications in automotive, industrial power control, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ATPAK (2 Leads+Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 10 V |