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9G85-BSS138

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9G85-BSS138

MOSFET N-CH SOT23

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi 9G85-BSS138 is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current capability of 220mA at 25°C, with a maximum power dissipation of 360mW. The Rds On is specified at 3.5 Ohms maximum at 220mA and 10V gate-source voltage. Its low gate charge of 2.4 nC at 10V and input capacitance of 27 pF at 25V are critical parameters for high-speed switching. Packaged in a SOT-23-3 (TO-236-3) surface mount configuration and supplied on tape and reel, the 9G85-BSS138 operates across a temperature range of -55°C to 150°C. This device is commonly utilized in applications such as power management, signal switching, and general-purpose logic level shifting within the consumer electronics and industrial automation sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C220mA (Ta)
Rds On (Max) @ Id, Vgs3.5Ohm @ 220mA, 10V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds27 pF @ 25 V

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